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Nano-pattern exposure system PhableR 100

Vendor 協同インターナショナル
Regular price ¥120,000,000
Sale price ¥120,000,000 Regular price
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Desktop type nano-pattern exposure (photolithography) equipment. Using the Talbot effect, it is possible to perform batch exposure with a half-pitch of 150 nm for periodic structures. Ideal for device development with periodicity at electron beam drawing level resolution. Batch exposure with a half pitch of 75 nm is also possible when a DUV light source is selected.

For more information is here

Specifications of the nano-pattern exposure system PhableR 100

resolution 150nm half pitch (linear grating)
*75nm half pitch (linear grating) when DUV light source is selected
board size ~φ100mm
mask format Five"
illumination uniformity <3%
pitch range 300nm - 3µm (150nm - when DUV light source is selected)
resist thickness about 1 µm
operation Manual loading – automatic exposure
Control touch panel
This is a pre order item. We will ship it when it comes in stock.