8インチSiCウェハ 8INCH SIC WAFER

Name: 8インチSiCウェハ 8INCH SIC WAFER
Brand: TYK
Price: 1420000.0 JPY
Availability: InStock

TYK

¥1,420,000

販売 ASK

スタイル

D GRADE 4H-N 2枚1式 ASK

D GRADE 4H-N 10枚1式 ASK

D GRADE 4H-N 25枚1式 ASK

8 inch N-type SiC Wafer
Properties	Specification
	P grade	R grade	D grade
Diameter	200mm± 0.25mm
Thickness	500µm± 25µm
Surface orientation error	4° toward<11-20>± 0.5°
Notch orientation	Perpendicular to the [11-20]± 1°
Edge Exclusion	3mm
Warp	≤ 40µm	≤ 100µm
Bow	± 25µm	± 60µm
TTV	≤10µm	≤15µm
MPD (MicroPipe Density)	≤ 1/cm2	≤ 5/cm2
Dislocation Density-EPD	≤8000/cm2	≤15000/cm2	No requirements
Dislocation Density-TSD	≤1000/cm2	≤1500/cm2	No requirements
Dislocation Density-BPD	≤2000/cm2	≤4000/cm2	No requirements
Resistivity	0.015-0.028Ωcm
（Si face）Surface roughness	< 0.2nm
（C face）Surface roughness	< 2nm
Cracks by high intensity light	None
Hex plates by high intensity light	None	Cumulative area ≤10% area
Polytype areas by high intensity light	4H 100% area	4H 95% area
Edge chip	None
Particle(＞0.3μm)	≤ 100ea	≤200ea
Residual Metals Contamination <1E11 (Al,Cr,Fe,Ni,Cu,K,Ti,Mn)	<1E11atoms/cm2
Stains by high intensity light	None
Packaging	Multi-wafer Cassette/Single-wafer box

※写真は代表的なSiCウェハ（当該品とは別口径）になります。

※在庫品ではありません。納期・数量は都度お問い合わせください。

数量は1以上でなければなりません