6インチSiCウェハ 6INCH SIC WAFER

Name: 6インチSiCウェハ 6INCH SIC WAFER
Brand: TYK
Price: 2000000.0 JPY
Availability: InStock

TYK

¥2,000,000

販売 ASK

スタイル

D GRADE 4H-P 2枚1式 ASK

D GRADE 4H-P 25枚1式 ASK

D GRADE 6H-P 2枚1式 ASK

D GRADE 6H-P 25枚1式 ASK

D GRADE 3C-N 2枚1式 ASK

D GRADE 3C-N 25枚1式 ASK

D GRADE 4H-N 2枚1式 ASK

D GRADE 4H-N 10枚1式 ASK

D GRADE 4H-N 25枚1式 ASK

6 inch 3C-N・P-type SiC Wafer
Properties			Specification
			Production Grade (P Grade)	Research Grade (R Grade)	Dummy Grade (D Grade)
Diameter			145.5 mm～150.0 mm
Thickness			350 μm ± 25 μm
Wafer Orientation			Offaxis:2.0°-4.0°toward[1120]±0.5°for 4H/6H-P, On axis:[111]±0.5°for3C-N
Micropipe Density*			0 cm-²
Resistivity*	p-type 4H/6H-P		≤0.1 Ω·cm		≤0.3 Ω·cm
	n-type 3C-N		≤0.8 mΩ·cm		≤1 m Ω·cm
Primary Flat Orientation		4H/6H-P	{1010} ± 5.0°
		3C-N	{110} ± 5.0°
Primary Flat Length			32.5 mm ± 2.0 mm
Secondary Flat Length			18.0 mm ± 2.0 mm
Secondary Flat Orientation			Silicon face up: 90° CW. from Prime flat ± 5.0°
Edge Exclusion			3 mm		6 mm
LTV			≤2.5 μm		≤10 μm
TTV			≤5 μm		≤15 μm
Bow			≤15 μm		≤25 μm
Warp			≤30 μm		≤40 μm
Roughness*		Polish	Ra≤1 nm
		CMP	Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light*			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas By High Intensity Light*			None		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light #			None		Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity			None
Packaging			Multi-wafer Cassette or Single Wafer Container
Notes: ※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

※写真は代表的なSiCウェハ（当該品とは別口径）になります。

※在庫品ではありません。納期・数量は都度お問い合わせください。

数量は1以上でなければなりません