4インチSiCウェハ 4INCH SIC WAFER

Name: 4インチSiCウェハ 4INCH SIC WAFER
Brand: TYK
Price: 1000000.0 JPY
Availability: InStock

TYK

¥1,000,000

販売 ASK

スタイル

D GRADE 4H-P 2枚1式 ASK

D GRADE 4H-P 25枚1式 ASK

D GRADE 6H-P 2枚1式 ASK

D GRADE 6H-P 25枚1式 ASK

D GRADE 3C-N 2枚1式 ASK

D GRADE 3C-N 25枚1式 ASK

4 inch SiC Wafer
Properties			Specification
			Z Grade（MPD)	P Grade	D Grade
Diameter			99.5mm～100.0mm
Thickness			350μm±25μm
Wafer Orientation			Off axis: 2.0°-4.0°toward[1120]±0.5°for 4H-P, On axis:〈111〉±0.5°for 3C-N
Micropipe Density※			0cm-²
Resistivity※	P-type 4H/6H-P		≤0. 1Ω ·cm		≤0.3Ω ·cm
	N-type 3C-N		≤0.8 mΩ ·cm		≤1mΩ ·cm
Primary Flat Orientation		4H/6H-P	｛1010｝±5.0°
		3C-N	｛110｝±5.0°
Primary Flat Length			32.5 mm±2.0 mm
Secondary Flat Length			18.0 mm±2.0 mm
Secondary Flat Orientation			Silicon face up: 90°CW.from Prime flat±5.0°
Edge Exclusion			3 mm		6 mm
LTV			≤2.5μm		≤10μm
TTV			≤5μm		≤15μm
Bow			≤15μm		≤25μm
Warp			≤30μm		≤40μm
Roughness※		Polish	Ra≤1 nm
		CMP	Ra≤0.2 nm		Ra≤0.5 nm
Edge Cracks By High Intensity Light			None		Cumulative length ≤ 10 mm, single length≤2 mm
Hex Plates By High Intensity Light※			Cumulative area ≤0.05%		Cumulative area ≤0.1%
Polytype Areas By High Intensity Light※			None		Cumulative area≤3%
Visual Carbon Inclusions			Cumulative area ≤0.05%		Cumulative area ≤3%
Silicon Surface Scratches By High Intensity Light#			None		Cumulative length≤1×wafer diameter
Edge Chips High By Intensity Light			None permitted ≥0.2mm width and depth		5 allowed, ≤1 mm each
Silicon Surface Contamination By High Intensity			None
Packaging			Multi-wafer Cassette or Single Wafer Container
Notes: ※ Defects limits apply to entire wafer surface except for the edge exclusion area. # The scratches should be checked on Si face only.

※写真は代表的なSiCウェハ（当該品とは別口径）になります。

※在庫品ではありません。納期・数量は都度お問い合わせください。

数量は1以上でなければなりません